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| HIGH SPEED CMOS LOGIC IC General description ELM7SH00XB 2-input NAND gate ELM7SH00XB is CMOS 2-input NAND gate which is suitable for battery-operated devices because of its low voltage and ultra high speed operation. The low power consumption contributes to longer battery life, which allows long time operation of devices. The internal circuit which provides high noise immunity and stable output is composed of 3 stages, including buffered output. Features Same electrical characteristic and high speed operation as 74VHC series Low consumption current Idd=1.0A(Max.)(Top=25 ) Wide power voltage range 2.0V5.5V Wide input voltage range : Vih=5.5V(Max.)(Vdd=05.5V) High speed Tpd=2ns(Typ.) (Vdd=5.0V) Small package : SOT-25, SSOT-25(SC-88A) Same function and pin configuration as ELM7SxxB Application Cell phones Digital cameras Portable electrical appliances like PDA, etc. Computers and peripherals Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc. Modification inside print board, adjustment of timing, solution to noise Power voltage change from 5V to 3V Selection guide ELM7SH00XB-EL Symbol a b c d Function Package Product version Taping direction 00 : 2-input NAND gate M : SOT-25 T : SSOT-25(SC-88A) B EL : Refer to PKG file ELM7SH 0 0 x B - EL a bc d Maximum absolute ratings Parameter Power supply voltage Input voltage Output voltage Input protection diode current Output parasitic diode current Output current VDD/GND current Power dissipation Storage temperature Symbol Vdd Vin Vout Iik Iok Iout Idd, Ignd Pd Tstg Limit -0.5+6.0 -0.5+6.0 -0.5Vdd+0.5 -20 20 25 50 150 -65+150 Unit V V V mA mA mA mA mW 1 HIGH SPEED CMOS LOGIC IC Suggested operating condition Parameter Power voltage Input voltage Output voltage Operating temperature High-input down-time ELM7SH00XB 2-input NAND gate Symbol Vdd Vin Vout Top tr, tf Limit 2.05.5 05.5 0Vdd -40+85 Vdd=3.30.3V Vdd=5.00.5V Unit V V V 0200 0100 ns Pin configuration TOP VIEW Pin No. 1 2 3 4 5 Pin name INB INA GND OUTX VDD Input INA Low Low High High INB Low High Low High Output OUTX High High High Low DC electrical characteristics Parameter Sym. Vih Input voltage Vil Vdd 2.0 3.0 5.5 2.0 3.0 5.5 2.0 3.0 4.5 3.0 4.5 2.0 3.0 4.5 3.0 4.5 5.5 5.5 Top=25 Min. Typ. Max. 1.50 2.10 3.85 0.50 0.90 1.65 1.90 2.00 2.90 3.00 4.40 4.50 2.58 3.94 0.10 0.10 0.10 0.36 0.36 -0.1 0.1 1.0 Top=-40+85 Min. Max. 1.50 2.10 3.85 0.50 0.90 1.65 1.90 2.90 4.40 2.48 3.80 0.10 0.10 0.10 0.44 0.44 -1.0 1.0 10.0 Unit V Condition V Voh Output voltage Vol V Vin=Vil Ioh=-50A or Vih Ioh=-4mA Ioh=-8mA Iol=50A V Vin=Vih Iol=4mA Iol=8mA Vin=Vdd or GND Vin=Vdd or GND Input current Static current Iin Idd A A 2 HIGH SPEED CMOS LOGIC IC AC electrical characteristics Parameter Sym. tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL Cin Cpd Vdd 3.30.3 3.30.3 5.00.5 5.00.5 5.0 CL 15 50 15 50 ELM7SH00XB 2-input NAND gate tr=tf=3ns Propagation delay-time Top=25 Min. Typ. 3.7 3.3 5.4 4.6 2.7 2.5 3.6 3.5 2.0 9.3 Top=-40+85 Unit Max. Min. Max. 7.9 1.0 9.5 7.9 1.0 9.5 11.4 1.0 13.0 11.4 1.0 13.0 ns 5.5 1.0 6.5 5.5 1.0 6.5 7.5 1.0 8.5 7.5 1.0 8.5 10.0 10.0 Condition Refer to test circuit Input capacity Equivalent inner capacity pF Vin=Vdd or GND pF f=1MHz * Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit. Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=CpdVddfin+Idd Test circuit Measured wave pattern * Output should be opened when measuring current consumption. Marking SSOT-25 SOT-25 No. Mark F 1 AZ (except I, O, X) Content ELM7SH series ELM7SH00XB Lot No. 3 |
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